| 2005 |
|---|
| 7 | EE | Martin Lemberger,
Albena Paskaleva,
Stefan Zürcher,
Anton J. Bauer,
Lothar Frey,
Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.
Microelectronics Reliability 45(5-6): 819-822 (2005) |
| 2003 |
|---|
| 6 | EE | Albena Paskaleva,
Martin Lemberger,
Stefan Zürcher,
Anton J. Bauer,
Lothar Frey,
Heiner Ryssel:
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors.
Microelectronics Reliability 43(8): 1253-1257 (2003) |
| 2001 |
|---|
| 5 | EE | S. Strobel,
Anton J. Bauer,
Matthias Beichele,
Heiner Ryssel:
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices.
Microelectronics Reliability 41(7): 1085-1088 (2001) |
| 4 | EE | Matthias Beichele,
Anton J. Bauer,
Heiner Ryssel:
Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient.
Microelectronics Reliability 41(7): 1089-1092 (2001) |
| 3 | EE | M. P. M. Jank,
Martin Lemberger,
Anton J. Bauer,
Lothar Frey,
Heiner Ryssel:
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides.
Microelectronics Reliability 41(7): 987-990 (2001) |
| 1998 |
|---|
| 2 | EE | Walter Bohmayr,
Alexander Burenkov,
Jürgen Lorenz,
Heiner Ryssel,
Siegfried Selberherr:
Monte Carlo simulation of silicon amorphization during ion implantation.
IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1236-1243 (1998) |
| 1985 |
|---|
| 1 | EE | Jürgen Lorenz,
Joachim Pelka,
Heiner Ryssel,
Albert Sachs,
Albert Seidl,
Milos Svoboda:
COMPOSITE -- A Complete Modeling Program of Silicon Technology.
IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 421-430 (1985) |
