| 2006 |
|---|
| 7 | EE | J. M. Rafí,
E. Simoen,
K. Hayama,
A. Mercha,
F. Campabadal,
H. Ohyama,
C. Claeys:
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectronics Reliability 46(9-11): 1657-1663 (2006) |
| 6 | EE | K. Hayama,
K. Takakura,
K. Shigaki,
H. Ohyama,
J. M. Rafí,
A. Mercha,
E. Simoen,
C. Claeys:
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectronics Reliability 46(9-11): 1731-1735 (2006) |
| 2005 |
|---|
| 5 | EE | K. Hayama,
K. Takakura,
H. Ohyama,
S. Kuboyama,
S. Matsuda,
J. M. Rafí,
A. Mercha,
E. Simoen,
C. Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectronics Reliability 45(9-11): 1376-1381 (2005) |
| 2001 |
|---|
| 4 | EE | H. Ohyama,
E. Simoen,
S. Kuroda,
C. Claeys,
Y. Takami,
T. Hakata,
K. Kobayashi,
M. Nakabayashi,
H. Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.
Microelectronics Reliability 41(1): 79-85 (2001) |
| 3 | EE | M. Da Rold,
E. Simoen,
Sofie Mertens,
Marc Schaekers,
G. Badenes,
Stefaan Decoutere:
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS.
Microelectronics Reliability 41(12): 1933-1938 (2001) |
| 2 | | M. Nakabayashi,
H. Ohyama,
E. Simoen,
M. Ikegami,
C. Claeys,
K. Kobayashi,
M. Yoneoka,
K. Miyahara:
Reliability of polycrystalline silicon thin film resistors.
Microelectronics Reliability 41(9-10): 1341-1346 (2001) |
| 1 | | H. Ohyama,
M. Nakabayashi,
E. Simoen,
C. Claeys,
T. Tanaka,
T. Hirao,
S. Onada,
K. Kobayashi:
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.
Microelectronics Reliability 41(9-10): 1443-1448 (2001) |
