| 2007 |
|---|
| 10 | EE | C. R. Parthasarathy,
A. Bravaix,
C. Guérin,
M. Denais,
V. Huard:
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.
PATMOS 2007: 191-200 |
| 2006 |
|---|
| 9 | EE | C. R. Parthasarathy,
M. Denais,
V. Huard,
G. Ribes,
D. Roy,
C. Guérin,
F. Perrier,
E. Vincent,
A. Bravaix:
Designing in reliability in advanced CMOS technologies.
Microelectronics Reliability 46(9-11): 1464-1471 (2006) |
| 2005 |
|---|
| 8 | EE | V. Huard,
M. Denais,
F. Perrier,
N. Revil,
C. R. Parthasarathy,
A. Bravaix,
E. Vincent:
A thorough investigation of MOSFETs NBTI degradation.
Microelectronics Reliability 45(1): 83-98 (2005) |
| 7 | EE | D. Goguenheim,
A. Bravaix,
S. Gomri,
J. M. Moragues,
C. Monserie,
N. Legrand,
P. Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.
Microelectronics Reliability 45(3-4): 487-492 (2005) |
| 6 | EE | C. Trapes,
D. Goguenheim,
A. Bravaix:
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.
Microelectronics Reliability 45(5-6): 883-886 (2005) |
| 5 | EE | Yannick Rey-Tauriac,
J. Badoc,
B. Reynard,
R. A. Bianchi,
D. Lachenal,
A. Bravaix:
Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology.
Microelectronics Reliability 45(9-11): 1349-1354 (2005) |
| 4 | EE | A. Bravaix,
D. Goguenheim,
M. Denais,
V. Huard,
C. R. Parthasarathy,
F. Perrier,
N. Revil,
E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectronics Reliability 45(9-11): 1370-1375 (2005) |
| 2004 |
|---|
| 3 | EE | A. Bravaix,
D. Goguenheim,
N. Revil,
E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectronics Reliability 44(1): 65-77 (2004) |
| 2003 |
|---|
| 2 | EE | A. Bravaix,
C. Trapes,
D. Goguenheim,
N. Revil,
E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectronics Reliability 43(8): 1241-1246 (2003) |
| 2001 |
|---|
| 1 | | A. Bravaix,
D. Goguenheim,
N. Revil,
E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectronics Reliability 41(9-10): 1313-1318 (2001) |
