2005 |
3 | EE | E. Deloffre,
L. Montès,
G. Ghibaudo,
S. Bruyère,
S. Blonkowski,
S. Bécu,
M. Gros-Jean,
S. Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.
Microelectronics Reliability 45(5-6): 925-928 (2005) |
2003 |
2 | EE | C. Besset,
S. Bruyère,
S. Blonkowski,
S. Crémer,
E. Vincent:
MIM capacitance variation under electrical stress.
Microelectronics Reliability 43(8): 1237-1240 (2003) |
1 | EE | F. Mondon,
S. Blonkowski:
Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors.
Microelectronics Reliability 43(8): 1259-1266 (2003) |