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2006 | ||
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6 | EE | Charles S. Whitman: Erratum to "Reliability results of HBTs with an InGaP emitter" [Microelectron. Reliability 46 (2006) 1261-1271]. Microelectronics Reliability 46(12): 2159 (2006) |
5 | EE | Charles S. Whitman, Terri M. Gilbert, Ann M. Rahn, Jennifer A. Antonell: Erratum to "Determining factors affecting ESD failure voltage using DOE" [Microelectron. Reliability 46 (2006) 1228-1237]. Microelectronics Reliability 46(12): 2160 (2006) |
4 | EE | Charles S. Whitman, Terri M. Gilbert, Ann M. Rahn, Jennifer A. Antonell: Determining factors affecting ESD failure voltage using DOE. Microelectronics Reliability 46(8): 1228-1237 (2006) |
3 | EE | Charles S. Whitman: Reliability results of HBTs with an InGaP emitter. Microelectronics Reliability 46(8): 1261-1271 (2006) |
2005 | ||
2 | EE | Charles S. Whitman, Michael Meeder: Determining constant voltage lifetimes for silicon nitride capacitors in a GaAs IC process by a step stress method. Microelectronics Reliability 45(12): 1882-1893 (2005) |
2003 | ||
1 | EE | Charles S. Whitman: Accelerated life test calculations using the method of maximum likelihood: an improvement over least squares. Microelectronics Reliability 43(6): 859-864 (2003) |
1 | Jennifer A. Antonell | [4] [5] |
2 | Terri M. Gilbert | [4] [5] |
3 | Michael Meeder | [2] |
4 | Ann M. Rahn | [4] [5] |