| 2008 |
|---|
| 7 | EE | Georges G. E. Gielen,
P. De Wit,
E. Maricau,
J. Loeckx,
J. Martin-Martinez,
Ben Kaczer,
Guido Groeseneken,
R. Rodríguez,
M. Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies.
DATE 2008: 1322-1327 |
| 2006 |
|---|
| 6 | EE | Antonis Papanikolaou,
Miguel Miranda,
Hua Wang,
Francky Catthoor,
M. Satyakiran,
Pol Marchal,
Ben Kaczer,
C. Bruynseraede,
Zsolt Tokei:
Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design.
VLSI-SoC 2006: 342-347 |
| 5 | EE | R. Fernández,
R. Rodríguez,
M. Nafría,
X. Aymerich,
Ben Kaczer,
Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability.
Microelectronics Reliability 46(9-11): 1608-1611 (2006) |
| 2005 |
|---|
| 4 | EE | Robert O'Connor,
Greg Hughes,
Robin Degraeve,
Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance.
Microelectronics Reliability 45(5-6): 869-874 (2005) |
| 2003 |
|---|
| 3 | EE | S. Aresu,
Ward De Ceuninck,
G. Knuyt,
J. Mertens,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger,
Jan D'Haen:
A new method for the analysis of high-resolution SILC data.
Microelectronics Reliability 43(9-11): 1483-1488 (2003) |
| 2002 |
|---|
| 2 | EE | Ben Kaczer,
Robin Degraeve,
M. Rasras,
A. De Keersgieter,
K. Van de Mieroop,
Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study.
Microelectronics Reliability 42(4-5): 555-564 (2002) |
| 1 | EE | S. Aresu,
Ward De Ceuninck,
R. Dreesen,
K. Croes,
E. Andries,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages.
Microelectronics Reliability 42(9-11): 1485-1489 (2002) |
