| |
| 2006 | ||
|---|---|---|
| 2 | EE | A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal 37(1): 64-70 (2006) |
| 2005 | ||
| 1 | EE | E. Halova, S. Alexandrova, A. Szekeres, M. Modreanu: LPCVD-silicon oxynitride films: interface properties. Microelectronics Reliability 45(5-6): 982-985 (2005) |
| 1 | S. Alexandrova | [1] |
| 2 | A. Gushterov | [2] |
| 3 | E. Halova | [1] |
| 4 | F. Hamelmann | [2] |
| 5 | U. Heinzmann | [2] |
| 6 | M. Modreanu | [1] |
| 7 | T. Nikolova | [2] |
| 8 | S. Simeonov | [2] |