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A. Szekeres

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2006
2EEA. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal 37(1): 64-70 (2006)
2005
1EEE. Halova, S. Alexandrova, A. Szekeres, M. Modreanu: LPCVD-silicon oxynitride films: interface properties. Microelectronics Reliability 45(5-6): 982-985 (2005)

Coauthor Index

1S. Alexandrova [1]
2A. Gushterov [2]
3E. Halova [1]
4F. Hamelmann [2]
5U. Heinzmann [2]
6M. Modreanu [1]
7T. Nikolova [2]
8S. Simeonov [2]

Colors in the list of coauthors

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)