| 2006 |
|---|
| 3 | EE | J. M. Rafí,
E. Simoen,
K. Hayama,
A. Mercha,
F. Campabadal,
H. Ohyama,
C. Claeys:
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectronics Reliability 46(9-11): 1657-1663 (2006) |
| 2 | EE | K. Hayama,
K. Takakura,
K. Shigaki,
H. Ohyama,
J. M. Rafí,
A. Mercha,
E. Simoen,
C. Claeys:
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectronics Reliability 46(9-11): 1731-1735 (2006) |
| 2005 |
|---|
| 1 | EE | K. Hayama,
K. Takakura,
H. Ohyama,
S. Kuboyama,
S. Matsuda,
J. M. Rafí,
A. Mercha,
E. Simoen,
C. Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectronics Reliability 45(9-11): 1376-1381 (2005) |
