R. Laqli
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2005
1
EE
D. Bauza
,
F. Rahmoune
, R. Laqli,
G. Ghibaudo
: On the SILC mechanism in MOSFET's with ultrathin oxides.
Microelectronics Reliability 45
(5-6): 849-852 (2005)
Coauthor
Index
1
D. Bauza
[
1
]
2
G. Ghibaudo
[
1
]
3
F. Rahmoune
[
1
]
Copyright ©
Sun May 17 03:24:02 2009 by
Michael Ley
(
ley@uni-trier.de
)
