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F. Velardi

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2006
7EEG. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006)
2005
6EEG. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005)
2003
5EEF. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori: Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . Microelectronics Reliability 43(4): 549-555 (2003)
4EEF. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina: Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectronics Reliability 43(9-11): 1847-1851 (2003)
3EEG. Busatto, F. Iannuzzo, F. Velardi, M. Valentino, G. P. Pepe: Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. Microelectronics Reliability 43(9-11): 1907-1912 (2003)
2002
2EEF. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy: The Reliability of New Generation Power MOSFETs in Radiation Environment. Microelectronics Reliability 42(9-11): 1629-1634 (2002)
1EEG. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi: Non-destructive high temperature characterisation of high-voltage IGBTs. Microelectronics Reliability 42(9-11): 1635-1640 (2002)

Coauthor Index

1M. Balsamo [1]
2G. Busatto [1] [2] [3] [4] [5] [6] [7]
3A. Candelori [4] [5]
4A. Cascio [4]
5B. Cascone [1]
6G. Currò [4] [6] [7]
7L. Fratelli [1]
8F. Frisina [4]
9F. Iannuzzo [1] [2] [3] [4] [5] [6] [7]
10A. Kaminksy [2]
11G. P. Pepe [3]
12A. Porzio [6] [7]
13A. Sanseverino [4] [6] [7]
14M. Valentino [3]
15J. Wyss [2] [4] [5]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)