| 2006 |
|---|
| 7 | EE | G. Busatto,
F. Iannuzzo,
A. Porzio,
A. Sanseverino,
F. Velardi,
G. Currò:
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectronics Reliability 46(9-11): 1854-1857 (2006) |
| 2005 |
|---|
| 6 | EE | G. Busatto,
A. Porzio,
F. Velardi,
F. Iannuzzo,
A. Sanseverino,
G. Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectronics Reliability 45(9-11): 1711-1716 (2005) |
| 2003 |
|---|
| 5 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Candelori:
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, .
Microelectronics Reliability 43(4): 549-555 (2003) |
| 4 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Sanseverino,
A. Candelori,
G. Currò,
A. Cascio,
F. Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectronics Reliability 43(9-11): 1847-1851 (2003) |
| 3 | EE | G. Busatto,
F. Iannuzzo,
F. Velardi,
M. Valentino,
G. P. Pepe:
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement.
Microelectronics Reliability 43(9-11): 1907-1912 (2003) |
| 2002 |
|---|
| 2 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Kaminksy:
The Reliability of New Generation Power MOSFETs in Radiation Environment.
Microelectronics Reliability 42(9-11): 1629-1634 (2002) |
| 1 | EE | G. Busatto,
B. Cascone,
L. Fratelli,
M. Balsamo,
F. Iannuzzo,
F. Velardi:
Non-destructive high temperature characterisation of high-voltage IGBTs.
Microelectronics Reliability 42(9-11): 1635-1640 (2002) |
