| 2005 |
|---|
| 9 | EE | M. Streibl,
F. Zängl,
K. Esmark,
Robert Schwencker,
Wolfgang Stadler,
Harald Gossner,
S. Drüen,
Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis.
Microelectronics Reliability 45(2): 313-321 (2005) |
| 8 | EE | Heinrich Wolf,
Horst A. Gieser,
Wolfgang Soldner,
Harald Gossner:
A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits.
Microelectronics Reliability 45(9-11): 1421-1424 (2005) |
| 2004 |
|---|
| 7 | EE | Harald Gossner:
ESD protection for the deep sub micron regime - a challenge for design methodology.
VLSI Design 2004: 809- |
| 2003 |
|---|
| 6 | EE | M. Streibl,
K. Esmark,
A. Sieck,
Wolfgang Stadler,
M. Wendel,
J. Szatkowski,
Harald Gossner:
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies.
Microelectronics Reliability 43(7): 1001-1010 (2003) |
| 2002 |
|---|
| 5 | EE | Wolfgang Stadler,
K. Esmark,
Harald Gossner,
M. Streibl,
M. Wendel,
Wolfgang Fichtner,
Dionyz Pogany,
Martin Litzenberger,
E. Gornik:
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development.
Microelectronics Reliability 42(9-11): 1267-1274 (2002) |
| 4 | EE | F. Zängl,
Harald Gossner,
K. Esmark,
R. Owen,
G. Zimmermann:
Case study of a technology transfer causing ESD problems.
Microelectronics Reliability 42(9-11): 1275-1280 (2002) |
| 2001 |
|---|
| 3 | EE | K. Esmark,
Wolfgang Stadler,
M. Wendel,
Harald Gossner,
X. Guggenmos,
Wolfgang Fichtner:
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase.
Microelectronics Reliability 41(11): 1761-1770 (2001) |
| 2 | EE | Harald Gossner,
T. Müller-Lynch,
K. Esmark,
M. Stecher:
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology.
Microelectronics Reliability 41(3): 385-393 (2001) |
| 1 | | Martin Litzenberger,
R. Pichler,
Scrgey Bychikhin,
Dionyz Pogany,
E. Gornik,
K. Esmark,
Harald Gossner:
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices.
Microelectronics Reliability 41(9-10): 1385-1390 (2001) |
