| 2005 |
|---|
| 5 | EE | Marco Buzzo,
Mauro Ciappa,
Maria Stangoni,
Wolfgang Fichtner:
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast.
Microelectronics Reliability 45(9-11): 1499-1504 (2005) |
| 4 | EE | Maria Stangoni,
Mauro Ciappa,
Wolfgang Fichtner:
Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices.
Microelectronics Reliability 45(9-11): 1532-1537 (2005) |
| 2003 |
|---|
| 3 | EE | Maria Stangoni,
Mauro Ciappa,
Wolfgang Fichtner:
A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy.
Microelectronics Reliability 43(9-11): 1651-1656 (2003) |
| 2 | EE | G. Mura,
Massimo Vanzi,
Maria Stangoni,
Mauro Ciappa,
Wolfgang Fichtner:
On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices.
Microelectronics Reliability 43(9-11): 1771-1776 (2003) |
| 2002 |
|---|
| 1 | EE | Maria Stangoni,
Mauro Ciappa,
Marco Buzzo,
M. Leicht,
Wolfgang Fichtner:
Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction.
Microelectronics Reliability 42(9-11): 1701-1706 (2002) |
