2005 |
11 | EE | G. Ribes,
S. Bruyère,
M. Denais,
F. Monsieur,
V. Huard,
D. Roy,
G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
Microelectronics Reliability 45(12): 1842-1854 (2005) |
10 | EE | G. Ribes,
S. Bruyère,
M. Denais,
D. Roy,
G. Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.
Microelectronics Reliability 45(5-6): 841-844 (2005) |
9 | EE | E. Deloffre,
L. Montès,
G. Ghibaudo,
S. Bruyère,
S. Blonkowski,
S. Bécu,
M. Gros-Jean,
S. Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.
Microelectronics Reliability 45(5-6): 925-928 (2005) |
2003 |
8 | EE | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
7 | EE | G. Ribes,
S. Bruyère,
F. Monsieur,
D. Roy,
V. Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown.
Microelectronics Reliability 43(8): 1211-1214 (2003) |
6 | EE | C. Besset,
S. Bruyère,
S. Blonkowski,
S. Crémer,
E. Vincent:
MIM capacitance variation under electrical stress.
Microelectronics Reliability 43(8): 1237-1240 (2003) |
2002 |
5 | EE | D. Roy,
S. Bruyère,
E. Vincent,
F. Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.
Microelectronics Reliability 42(9-11): 1497-1500 (2002) |
4 | EE | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Gate oxide Reliability assessment optimization.
Microelectronics Reliability 42(9-11): 1505-1508 (2002) |
2001 |
3 | EE | S. Bruyère,
D. Roy,
E. Robilliart,
E. Vincent,
G. Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides.
Microelectronics Reliability 41(7): 1031-1034 (2001) |
2 | | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectronics Reliability 41(9-10): 1295-1300 (2001) |
1 | | S. Bruyère,
F. Monsieur,
D. Roy,
E. Vincent,
G. Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectronics Reliability 41(9-10): 1367-1372 (2001) |