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S. Bruyère

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2005
11EEG. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo: Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectronics Reliability 45(12): 1842-1854 (2005)
10EEG. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo: Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectronics Reliability 45(5-6): 841-844 (2005)
9EEE. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer: Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectronics Reliability 45(5-6): 925-928 (2005)
2003
8EEF. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo: On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability 43(8): 1199-1202 (2003)
7EEG. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard: New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectronics Reliability 43(8): 1211-1214 (2003)
6EEC. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent: MIM capacitance variation under electrical stress. Microelectronics Reliability 43(8): 1237-1240 (2003)
2002
5EED. Roy, S. Bruyère, E. Vincent, F. Monsieur: Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectronics Reliability 42(9-11): 1497-1500 (2002)
4EEF. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Gate oxide Reliability assessment optimization. Microelectronics Reliability 42(9-11): 1505-1508 (2002)
2001
3EES. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo: Body effect induced wear-out acceleration in ultra-thin oxides. Microelectronics Reliability 41(7): 1031-1034 (2001)
2 F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectronics Reliability 41(9-10): 1295-1300 (2001)
1 S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo: Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectronics Reliability 41(9-10): 1367-1372 (2001)

Coauthor Index

1S. Bécu [9]
2C. Besset [6]
3S. Blonkowski [6] [9]
4S. Crémer [6] [9]
5E. Deloffre [9]
6M. Denais [10] [11]
7G. Ghibaudo [1] [2] [3] [4] [8] [9] [10] [11]
8M. Gros-Jean [9]
9V. Huard [7] [8] [11]
10F. Monsieur [1] [2] [4] [5] [7] [8] [11]
11L. Montès [9]
12G. Pananakakis [2] [4] [8]
13G. Ribes [7] [10] [11]
14E. Robilliart [3]
15D. Roy [1] [2] [3] [4] [5] [7] [8] [10] [11]
16Thomas Skotnicki [8]
17E. Vincent [1] [2] [3] [4] [5] [6] [8]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)