| 2005 |
|---|
| 4 | EE | G. S. Lujan,
W. Magnus,
L.-Å. Ragnarsson,
S. Kubicek,
Stefan De Gendt,
Marc M. Heyns,
K. De Meyer:
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.
Microelectronics Reliability 45(5-6): 794-797 (2005) |
| 3 | EE | Vidya Kaushik,
Martine Claes,
Annelies Delabie,
Sven Van Elshocht,
Olivier Richard,
Thierry Conard,
Erika Rohr,
Thomas Witters,
Matty Caymax,
Stefan De Gendt:
Observation and characterization of defects in HfO2 high-K gate dielectric layers.
Microelectronics Reliability 45(5-6): 798-801 (2005) |
| 2001 |
|---|
| 2 | EE | C. Zhao,
G. Roebben,
H. Bender,
E. Young,
S. Haukka,
M. Houssa,
M. Naili,
Stefan De Gendt,
Marc M. Heyns,
O. Van Der Biest:
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction.
Microelectronics Reliability 41(7): 995-998 (2001) |
| 1999 |
|---|
| 1 | EE | Marc M. Heyns,
Twan Bearda,
Ingrid Cornelissen,
Stefan De Gendt,
Robin Degraeve,
Guido Groeseneken,
Conny Kenens,
D. Martin Knotter,
Lee M. Loewenstein,
Paul W. Mertens,
Sofie Mertens,
Marc Meuris,
Tanya Nigam,
Marc Schaekers,
Ivo Teerlinck,
Wilfried Vandervorst,
Rita Vos,
Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides.
IBM Journal of Research and Development 43(3): 339-350 (1999) |
