| 2005 |
|---|
| 6 | EE | L. Aguilera,
M. Porti,
M. Nafría,
X. Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale.
Microelectronics Reliability 45(9-11): 1390-1393 (2005) |
| 2003 |
|---|
| 5 | EE | M. Porti,
S. Meli,
M. Nafría,
X. Aymerich:
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.
Microelectronics Reliability 43(8): 1203-1209 (2003) |
| 4 | EE | M. Porti,
M. Nafría,
X. Aymerich:
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Microelectronics Reliability 43(9-11): 1501-1505 (2003) |
| 2001 |
|---|
| 3 | EE | R. Rodríguez,
M. Porti,
M. Nafría,
X. Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films.
Microelectronics Reliability 41(7): 1011-1013 (2001) |
| 2 | EE | M. Porti,
X. Blasco,
M. Nafría,
X. Aymerich,
Alexander Olbrich,
Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope.
Microelectronics Reliability 41(7): 1041-1044 (2001) |
| 1 | EE | D. Hill,
X. Blasco,
M. Porti,
M. Nafría,
X. Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si.
Microelectronics Reliability 41(7): 1077-1079 (2001) |
