L. Aguilera

2005
1	EE	L. Aguilera, M. Porti, M. Nafría, X. Aymerich: Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectronics Reliability 45(9-11): 1390-1393 (2005)

Coauthor Index

1	X. Aymerich	[1]
2	M. Nafría	[1]
3	M. Porti	[1]