| 2005 |
|---|
| 4 | EE | Ernest Y. Wu,
Jordi Suñé:
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability.
Microelectronics Reliability 45(12): 1809-1834 (2005) |
| 2004 |
|---|
| 3 | EE | Enrique Miranda,
Jordi Suñé:
Electron transport through broken down ultra-thin SiO2 layers in MOS devices.
Microelectronics Reliability 44(1): 1-23 (2004) |
| 2003 |
|---|
| 2 | EE | Ernest Y. Wu,
Jordi Suñé,
Wing L. Lai,
Alex Vayshenker,
Edward J. Nowak,
David L. Harmon:
Critical reliability challenges in scaling SiO2-based dielectric to its limit.
Microelectronics Reliability 43(8): 1175-1184 (2003) |
| 1 | EE | Jordi Suñé,
Ernest Y. Wu,
D. Jiménez,
Wing L. Lai:
Statistics of soft and hard breakdown in thin SiO2 gate oxides.
Microelectronics Reliability 43(8): 1185-1192 (2003) |
