2006 |
11 | EE | Cora Salm,
A. J. Hof,
Fred G. Kuper,
J. Schmitz:
Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs.
Microelectronics Reliability 46(9-11): 1617-1622 (2006) |
2005 |
10 | EE | M. S. B. Sowariraj,
Theo Smedes,
Peter C. de Jong,
Cora Salm,
Ton J. Mouthaan,
Fred G. Kuper:
A 3-D Circuit Model to evaluate CDM performance of ICs.
Microelectronics Reliability 45(9-11): 1425-1429 (2005) |
2004 |
9 | EE | Guoqiao Tao,
Andrea Scarpa,
Leo van Marwijk,
Kitty van Dijk,
Fred G. Kuper:
Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes.
Microelectronics Reliability 44(8): 1269-1273 (2004) |
2003 |
8 | EE | Yuan Li,
Klaas Jelle Veenstra,
Jerôme Dubois,
Lei Peters-Wu,
Agnes van Zomeren,
Fred G. Kuper:
Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug.
Microelectronics Reliability 43(9-11): 1449-1454 (2003) |
7 | EE | M. S. B. Sowariraj,
Theo Smedes,
Cora Salm,
Ton J. Mouthaan,
Fred G. Kuper:
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy.
Microelectronics Reliability 43(9-11): 1569-1575 (2003) |
2002 |
6 | EE | N. Tosic Golo,
Fred G. Kuper,
Ton J. Mouthaan:
Zapping thin film transistors.
Microelectronics Reliability 42(4-5): 747-765 (2002) |
5 | EE | M. S. B. Sowariraj,
Theo Smedes,
Cora Salm,
Ton J. Mouthaan,
Fred G. Kuper:
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress.
Microelectronics Reliability 42(9-11): 1287-1292 (2002) |
4 | EE | H. V. Nguyen,
Cora Salm,
J. Vroemen,
J. Voets,
B. Krabbenborg,
J. Bisschop,
A. J. Mouthaan,
Fred G. Kuper:
Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling.
Microelectronics Reliability 42(9-11): 1415-1420 (2002) |
3 | EE | H. V. Nguyen,
Cora Salm,
R. Wenzel,
A. J. Mouthaan,
Fred G. Kuper:
Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime.
Microelectronics Reliability 42(9-11): 1421-1425 (2002) |
2001 |
2 | EE | Gianluca Boselli,
Stan Meeuwsen,
Ton J. Mouthaan,
Fred G. Kuper:
Investigations on double-diffused MOS transistors under ESD zap conditions.
Microelectronics Reliability 41(3): 395-405 (2001) |
1 | | N. Tosic Golo,
S. van der Wal,
Fred G. Kuper,
Ton J. Mouthaan:
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.
Microelectronics Reliability 41(9-10): 1391-1396 (2001) |