| 2006 |
|---|
| 4 | EE | C. R. Parthasarathy,
M. Denais,
V. Huard,
G. Ribes,
D. Roy,
C. Guérin,
F. Perrier,
E. Vincent,
A. Bravaix:
Designing in reliability in advanced CMOS technologies.
Microelectronics Reliability 46(9-11): 1464-1471 (2006) |
| 2005 |
|---|
| 3 | EE | G. Ribes,
S. Bruyère,
M. Denais,
F. Monsieur,
V. Huard,
D. Roy,
G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
Microelectronics Reliability 45(12): 1842-1854 (2005) |
| 2 | EE | G. Ribes,
S. Bruyère,
M. Denais,
D. Roy,
G. Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.
Microelectronics Reliability 45(5-6): 841-844 (2005) |
| 2003 |
|---|
| 1 | EE | G. Ribes,
S. Bruyère,
F. Monsieur,
D. Roy,
V. Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown.
Microelectronics Reliability 43(8): 1211-1214 (2003) |
