2006 |
7 | EE | S. Thijs,
M. Natarajan Iyer,
D. Linten,
Wutthinan Jeamsaksiri,
T. Daenen,
Robin Degraeve,
Andries Scholten,
Stefaan Decoutere,
Guido Groeseneken:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.
Microelectronics Reliability 46(5-6): 702-712 (2006) |
2005 |
6 | EE | J. Pétry,
Wilfried Vandervorst,
L. Pantisano,
Robin Degraeve:
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers.
Microelectronics Reliability 45(5-6): 815-818 (2005) |
5 | EE | Robert O'Connor,
Greg Hughes,
Robin Degraeve,
Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance.
Microelectronics Reliability 45(5-6): 869-874 (2005) |
2003 |
4 | EE | S. Aresu,
Ward De Ceuninck,
G. Knuyt,
J. Mertens,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger,
Jan D'Haen:
A new method for the analysis of high-resolution SILC data.
Microelectronics Reliability 43(9-11): 1483-1488 (2003) |
2002 |
3 | EE | Ben Kaczer,
Robin Degraeve,
M. Rasras,
A. De Keersgieter,
K. Van de Mieroop,
Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study.
Microelectronics Reliability 42(4-5): 555-564 (2002) |
2 | EE | S. Aresu,
Ward De Ceuninck,
R. Dreesen,
K. Croes,
E. Andries,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages.
Microelectronics Reliability 42(9-11): 1485-1489 (2002) |
1999 |
1 | EE | Marc M. Heyns,
Twan Bearda,
Ingrid Cornelissen,
Stefan De Gendt,
Robin Degraeve,
Guido Groeseneken,
Conny Kenens,
D. Martin Knotter,
Lee M. Loewenstein,
Paul W. Mertens,
Sofie Mertens,
Marc Meuris,
Tanya Nigam,
Marc Schaekers,
Ivo Teerlinck,
Wilfried Vandervorst,
Rita Vos,
Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides.
IBM Journal of Research and Development 43(3): 339-350 (1999) |