2005 |
7 | EE | E. Miranda,
B. Brandala:
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures.
Microelectronics Reliability 45(1): 175-178 (2005) |
6 | EE | E. Miranda,
J. Molina,
Y. Kim,
H. Iwai:
Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress.
Microelectronics Reliability 45(9-11): 1365-1369 (2005) |
2004 |
5 | EE | E. Miranda,
E. Mallaina:
Single-equation model for low and high voltage soft breakdown conduction.
Microelectronics Reliability 44(1): 163-166 (2004) |
2002 |
4 | EE | E. Miranda,
G. Redin,
A. Faigón:
Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression.
Microelectronics Reliability 42(6): 935-941 (2002) |
2000 |
3 | EE | Leonardo Maria Reyneri,
Marcello Chiaberge,
Luciano Lavagno,
Begoña Pino,
E. Miranda:
Simulink-Based HW/SW Codesign of Embedded Neuro-Fuzzy Systems.
Int. J. Neural Syst. 10(3): 211-226 (2000) |
1995 |
2 | | E. Miranda,
Leonardo Maria Reyneri:
A CPWM Synapsis for Weighted Radial Basis Functions.
IWANN 1995: 830-837 |
1991 |
1 | | Jean Dollimore,
E. Miranda,
Wang Xu:
The Design of a System for Distributing Shared Objects.
Comput. J. 34(6): 514-521 (1991) |