Volume 41, Number 1, January 2001
- Ninoslav Stojadinovic, Michael G. Pecht:
Editorial.
1
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- S. Deleonibus:
Alternative CMOS or alternative to CMOS?
3-12
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- Joachim N. Burghartz:
Status and trends of silicon RF technology.
13-19
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- M. Borgarino, Roberto Menozzi, D. Dieci, L. Cattani, Fausto Fantini:
Reliability physics of compound semiconductor transistors for microwave applications.
21-30
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- Wim Magnus, Wim Schoenmaker:
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors.
31-35
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- Nian Yang, Jimmie J. Wortman:
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs.
37-46
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- A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, A. Shigetomi:
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range.
47-52
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- Peter Coppens, Guido Vanhorebeek, Eddy De Backer:
Correlation between predicted cause of SRAM failures and in-line defect data.
53-57
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- Milan Jevtic, Z. Stanimirovic, I. Stanimirovic:
Evaluation of thick-film resistor structural parameters based on noise index measurements.
59-66
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- G. Golan, E. Rabinovich, A. Inberg, A. Axelevitch, G. Lubarsky, P. G. Rancoita, M. Demarchi, A. Seidman, N. Croitoru:
Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors.
67-72
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- Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel, Alain Cappy:
Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs.
73-77
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- H. Ohyama, E. Simoen, S. Kuroda, C. Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, H. Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.
79-85
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- B. K. Jones, C. N. Graham, A. Konczakowska, L. Hasse:
The coherence of the gate and drain noise in stressed AlGaAs-InAlGaAs PHEMTs.
87-97
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- Gaetano Ferrante, Dominique Persano Adorno:
A wavelet analysis of 1/f and white noise in microwave transistors.
99-104
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- X. Y. Chen, A. Pedersen, A. D. van Rheenen:
Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes.
105-110
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- H. Oohashi, M. Fukuda, Y. Kondo, M. Yamamoto, Y. Kadota, Y. Kawaguchi, K. Kishi, Y. Tohmori, K. Yokoyama, Y. Itaya:
Highly reliable spot-size converter integrated laser diodes over a wide temperature range for access network systems.
111-118
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- Chern-Sheng Lin, Li Wen Lue:
An image system for fast positioning and accuracy inspection of ball grid array boards.
119-128
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- Fuchen Mu, Changhua Tan, Mingzhen Xu:
Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions.
129-131
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- Klaus-Willi Pieper, Martin Sauter:
Direct temperature measurement of integrated microelectronic devices by thermally induced leakage currents.
133-136
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- M. M. Shahidul Hassan, A. H. Khandoker:
New expression for base transit time in a bipolar transistor for all levels of injection.
137-140
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- Milan Jevtic:
Guidebook for Managing Silicon Chip Reliability; Michael G. Pecht, Riko Radojcic, Gopal Rao. CRC Press LLC, Boca Raton, 1999, 224 pp. ISBN: 0-8493-9624-7.
141-142
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- Ninoslav Stojadinovic:
Understanding Semiconductor Devices; Sima Dimitrijev. Oxford University Press, New York. 2000. ISBN: 0-19-513186-X.
142-143
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Volume 41, Number 2, February 2001
- F. Schwierz, Juin J. Liou:
Semiconductor devices for RF applications: evolution and current status.
145-168
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- M. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.
169-177
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- Hei Wong, P. G. Han, M. C. Poon, Y. Gao:
Investigation of the surface silica layer on porous poly-Si thin films.
179-184
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- M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov, V. S. Pershenkov:
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages.
185-191
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- Kin P. Cheung:
Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models.
193-199
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- C. T. Hsu, M. M. Lau, Y. T. Yeow:
Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs.
201-209
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- Robert C. Baumann, Eric B. Smith:
Neutron-induced 10B fission as a major source of soft errors in high density SRAMs.
211-218
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- Alexander N. Bubennikov, Andrey V. Zykov:
Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect.
219-228
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- Gábor Harsányi, George Inzelt:
Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems.
229-237
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- Constance E. Schuster, Mark G. Vangel, Harry A. Schafft:
Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions.
239-252
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- L. Militaru, A. Souifi, M. Mouis, A. Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture.
253-263
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- Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy, Jacques Lebailly:
Low-frequency noise in single-poly bipolar transistors at low base current density.
265-271
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- A. C. Lamb, J. F. W. Schiz, J. M. Bonar, F. Cristiano, P. Ashburn, S. Hall, P. L. F. Hemment:
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy.
273-279
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- Jingsong Xie, Michael G. Pecht, David DeDonato, Ali Hassanzadeh:
An investigation of the mechanical behavior of conductive elastomer interconnects.
281-286
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- P. L. Tu, Y. C. Chan, K. C. Hung, J. K. L. Lai:
Study of micro-BGA solder joint reliability.
287-293
Electronic Edition (link) BibTeX
- Shatil Haque, Kalyan Siddabattula, Mike Craven, Sihua Wen, Xingsheng Liu, Dusan Boroyevich, Guo-Quan Lu:
Design issues of a three-dimensional packaging scheme for power modules.
295-305
Electronic Edition (link) BibTeX
- L. Y. Sheng, C. De Tandt, Willy Ranson, Roger Vounckx:
Reliability aspects of thermal micro-structures implemented on industrial 0.8 mum CMOS chips.
307-315
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- Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway:
A generalized model for the lifetime of microelectronic components, applied to storage conditions.
317-322
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- Asad A. Ismaeel, Rajan Mathew, R. Bhatnagar:
Module allocation with idle-time utilization for on-line testability.
323-332
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Volume 41, Number 3, March 2001
- Koen G. Verhaege:
Editorial.
333
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- S. Voldman, W. Anderson, R. Ashton, M. Chaine, C. Duvvury, T. Maloney, E. Worley:
A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies.
335-348
Electronic Edition (link) BibTeX
- Jeremy C. Smith:
An anti-snapback circuit technique for inhibiting parasitic bipolar conduction during EOS/ESD events.
349-357
Electronic Edition (link) BibTeX
- Timothy J. Maloney, Wilson Kan:
Stacked PMOS clamps for high voltage power supply protection.
359-366
Electronic Edition (link) BibTeX
- Warren R. Anderson, William M. Gonzalez, Sheera S. Knecht, Wendy Fowler:
Reliability considerations for ESD protection under wire bonding pads.
367-373
Electronic Edition (link) BibTeX
- K. Bock, Bart Keppens, V. De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology.
375-383
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- Harald Gossner, T. Müller-Lynch, K. Esmark, M. Stecher:
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology.
385-393
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- Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper:
Investigations on double-diffused MOS transistors under ESD zap conditions.
395-405
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- L. G. Henry, M. A. Kelly, T. Diep, J. Barth:
Issues concerning charged device model ESD verification modules - the need to move to alumina.
407-415
Electronic Edition (link) BibTeX
- Ming-Dou Ker, Yu-Yu Sung:
Hardware/firmware co-design in an 8-bits microcontroller to solve the system-level ESD issue on keyboard.
417-429
Electronic Edition (link) BibTeX
- P. Schauer, Josef Sikula, P. Moravec:
Transport and noise properties of CdTe(Cl) crystals.
431-436
Electronic Edition (link) BibTeX
- R. Dreesen, K. Croes, J. Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation.
437-443
Electronic Edition (link) BibTeX
- A. H. Fischer, A. Abel, M. Lepper, A. E. Zitzelsberger, A. von Glasow:
Modeling bimodal electromigration failure distributions.
445-453
Electronic Edition (link) BibTeX
- Keizo Yamada, Toyokazu Nakamura, Tohru Tsujide:
An in-line process monitoring method using electron beam induced substrate current.
455-459
Electronic Edition (link) BibTeX
- Thomas D. Moore, John L. Jarvis:
Improved reliability in small multichip ball grid arrays.
461-469
Electronic Edition (link) BibTeX
- Christian Rembe, Harald Aschemann, Stefan aus der Wiesche, Eberhard P. Hofer, Hélèn Debéda, Jürgen Mohr, Ulrike Wallrabe:
Testing and improvement of micro-optical-switch dynamics.
471-480
Electronic Edition (link) BibTeX
Volume 41, Number 4, April 2001
- Ninoslav Stojadinovic, Michael G. Pecht:
In memory of D. Stewart Peck.
481
Electronic Edition (link) BibTeX
- Udo Schwalke:
Progress in device isolation technology.
483-490
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- Roland Reicher, Walter Smetana, Julius C. Schuster, Alexander Adlaßnig:
A fritless copper conductor system for power electronic applications.
491-498
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- Dale W. Swanson, Leonard R. Enlow:
Stress effects of epoxy adhesives on ceramic substrates and magnetics.
499-510
Electronic Edition (link) BibTeX
- Kai F. Dombrowski, B. Dietrich, I. De Wolf, R. Rooyackers, G. Badenes:
Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy.
511-515
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- M. P. Rodriguez, N. Y. A. Shammas:
Finite element simulation of thermal fatigue in multilayer structures: thermal and mechanical approach.
517-523
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- Yutaka Kumano, Yoshihiro Tomura, Minehiro Itagaki, Yoshihiro Bessho:
Development of chip-on-flex using SBB flip-chip technology.
525-530
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- Dubravka Rocak, Darko Belavic, Marko Hrovat, Josef Sikula, Pavel Koktavy, Jan Pavelka, Vlasta Sedlakova:
Low-frequency noise of thick-film resistors as quality and reliability indicator.
531-542
Electronic Edition (link) BibTeX
- T. Pompl, C. Engel, H. Wurzer, M. Kerber:
Soft breakdown and hard breakdown in ultra-thin oxides.
543-551
Electronic Edition (link) BibTeX
- Quan Qi:
Reliability studies of two flip-chip BGA packages using power cycling test.
553-562
Electronic Edition (link) BibTeX
- Zsolt Illyefalvi-Vitéz:
Laser processing for microelectronics packaging applications.
563-570
Electronic Edition (link) BibTeX
- D. G. Walker, T. S. Fisher, J. Liu, R. D. Schrimpf:
Thermal modeling of single event burnout failure in semiconductor power devices.
571-578
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- R. Kolarova, Thomas Skotnicki, J. A. Chroboczek:
Low frequency noise in thin gate oxide MOSFETs.
579-585
Electronic Edition (link) BibTeX
- Koji Eriguchi, Yoshinao Harada, Masaaki Niwa:
Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics.
587-595
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- Hongxia Ren, Yue Hao:
Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET's.
597-604
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- Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco García:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
605-610
Electronic Edition (link) BibTeX
- Valentin Videkov, Slavka Tzanova, Radosvet Arnaudov, Nikolai Iordanov:
New assembling technique for BGA packages without thermal processes.
611-615
Electronic Edition (link) BibTeX
- A. M. Sarhan, A. M. Abouammoh:
Reliability of k-out-of-n nonrepairable systems with nonindependent components subjected to common shocks.
617-621
Electronic Edition (link) BibTeX
- Milan Jevtic:
Optimal Reliability Design: Fundamentals and Applications; Way Kuo, Rajendra Prasad, Frank A. Tillman, Ching-Lai Mwang. Cambridge University Press, Cambridge, 2001, 389+XXI pp. ISBN: 0-521-78127-2 (hardbound).
623-624
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Volume 41, Number 5, May 2001
- Elyse Rosenbaum, Jie Wu:
Trap generation and breakdown processes in very thin gate oxides.
625-632
Electronic Edition (link) BibTeX
- Petteri Palm, Jarmo Määttänen, Aulis Tuominen, Eero Ristolainen:
Reliability of 80 mum pitch flip chip attachment on flex.
633-638
Electronic Edition (link) BibTeX
- Shatil Haque, Guo-Quan Lu:
Effects of device passivation materials on solderable metallization of IGBTs.
639-647
Electronic Edition (link) BibTeX
- Everett E. King, Ronald C. Lacoe, Janet Wang-Ratkovic:
Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices.
649-660
Electronic Edition (link) BibTeX
- Jaakko Lenkkeri, Tuomo Jaakola:
Rapid power cycling of flip-chip and CSP components on ceramic substrates.
661-668
Electronic Edition (link) BibTeX
- Andrzej Dziedzic, Leszek J. Golonka, Jaroslaw Kita, Heiko Thust, Karl-Heinz Drue, Reinhard Bauer, Lars Rebenklau, Klaus-Jürgen Wolter:
Electrical and stability properties and ultrasonic microscope characterisation of low temperature co-fired ceramics resistors.
669-676
Electronic Edition (link) BibTeX
- S. C. Hung, P. J. Zheng, S. H. Ho, S. C. Lee, H. N. Chen, J. D. Wu:
Board level reliability of PBGA using flex substrate.
677-687
Electronic Edition (link) BibTeX
- Yung-Huei Lee, Tom Linton, Ken Wu, Neal Mielke:
Effect of trench edge on pMOSFET reliability.
689-696
Electronic Edition (link) BibTeX
- Takayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii, Koji Eriguchi:
Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics.
697-704
Electronic Edition (link) BibTeX
- Greg Hotchkiss, Gonzalo Amador, Darvin Edwards, Paul Hundt, Les Stark, Roger Stierman, Gail Heinen:
Wafer level packaging of a tape flip-chip chip scale packages.
705-713
Electronic Edition (link) BibTeX
- Harry K. Charles Jr.:
Tradeoffs in multichip module yield and cost with known good die probability and repair.
715-733
Electronic Edition (link) BibTeX
- Frank Stepniak:
Conversion of the under bump metallurgy into intermetallics: the impact on flip chip reliability.
735-744
Electronic Edition (link) BibTeX
- Kin P. Cheung:
Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide.
745-749
Electronic Edition (link) BibTeX
- Terence B. Hook, David Harmon, Chuan Lin:
Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation.
751-765
Electronic Edition (link) BibTeX
- D. Manic, J. Petr, R. S. Popovic:
Die stress drift measurement in IC plastic packages using the piezo-Hall effect.
767-771
Electronic Edition (link) BibTeX
- O. Mrooz, A. Kovalski, J. Pogorzelska, O. Shpotyuk, M. Vakiv, Bohdan S. Butkiewicz, J. Maciak:
Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits.
773-777
Electronic Edition (link) BibTeX
Volume 41, Number 6, June 2001
- Brian K. Jones:
In the memory of Yisong Dai.
779
Electronic Edition (link) BibTeX
- Stephen O'Reilly, Maeve Duffy, Thomas Ott, Terence O'Donnell, Paul McCloskey, S. Cian O'Mathuna:
Characterisation of embedded filters in advanced printed wiring boards.
781-788
Electronic Edition (link) BibTeX
- Roland Sorge, Bernd Heinemann:
Recombination current measurements in the space charge region of MOS field-induced pn junctions.
789-795
Electronic Edition (link) BibTeX
- Mark Zwolinski:
A technique for transparent fault injection and simulation in VHDL.
797-804
Electronic Edition (link) BibTeX
- Michael J. Dion:
Improved understanding of metal ion reservoirs within barrier-metal systems.
805-814
Electronic Edition (link) BibTeX
- Michael Schenkel, Paul Pfäffli, Wolfgang Wilkening, D. Aemmer, Wolfgang Fichtner:
Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation.
815-822
Electronic Edition (link) BibTeX
- Mirko Jakovljevic, Peter A. Fotiu, Zeljko Mrcarica, Vanco B. Litovski, Helmut Detter:
Electro-thermal simulation of microsystems with mixed abstraction modelling.
823-835
Electronic Edition (link) BibTeX
- Slobodan Mijalkovic:
A new finite element approach to stress analysis in microfabrication technology.
837-845
Electronic Edition (link) BibTeX
- M. J. Martín-Martínez, S. Pérez, D. Pardo, T. González:
High injection effects on noise characteristics of Si BJTs and SiGe HBTs.
847-854
Electronic Edition (link) BibTeX
- S. Haendler, J. Jomaah, G. Ghibaudo, F. Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.
855-860
Electronic Edition (link) BibTeX
- Michael Scheffler, Didier Cottet, Gerhard Tröster:
A simplified yield modeling method for design rule trade-off in interconnection substrates.
861-869
Electronic Edition (link) BibTeX
- G. Golan, A. Axelevitch, E. Rabinovitch:
Effects of electron beam generated in vacuum photo-thermal processing on metal-silicon contacts.
871-879
Electronic Edition (link) BibTeX
- Martin Sandén, B. Gunnar Malm, Jan V. Grahn, Mikael Östling:
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors.
881-886
Electronic Edition (link) BibTeX
- J. Barton, G. McCarthy, R. Doyle, K. Delaney, Enric Cabruja, M. Lozano, A. Collado, J. Santander:
Reliability evaluation of a silicon-on-silicon MCM-D package.
887-899
Electronic Edition (link) BibTeX
- F. N. Masana:
A new approach to the dynamic thermal modelling of semiconductor packages.
901-912
Electronic Edition (link) BibTeX
- W. Y. Ho, C. Surya:
Study of light-induced annealing effects in a-Si: H thin films.
913-917
Electronic Edition (link) BibTeX
- Yisong Dai:
Generation-recombination noise in bipolar transistors.
919-925
Electronic Edition (link) BibTeX
- Lingfeng Mao, Changhua Tan, Mingzhen Xu:
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures.
927-931
Electronic Edition (link) BibTeX
Volume 41,
Number 7,
July 2001
- Georges Charitat:
In memory of Pierre Rossel.
933-934
Electronic Edition (link) BibTeX
- Andreas Martin:
Editorial.
935
Electronic Edition (link) BibTeX
- Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson:
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics.
937-945
Electronic Edition (link) BibTeX
- T. Mikolajick, C. Dehm, W. Hartner, I. Kasko, M. J. Kastner, N. Nagel, M. Moert, C. Mazure:
FeRAM technology for high density applications.
947-950
Electronic Edition (link) BibTeX
- P. O'Sullivan, R. Clerc, Kevin G. McCarthy, Alan Mathewson, G. Ghibaudo:
Direct tunnelling models for circuit simulation.
951-957
Electronic Edition (link) BibTeX
- G. Reimbold, T. Poiroux:
Plasma charging damage mechanisms and impact on new technologies.
959-965
Electronic Edition (link) BibTeX
- R. Falster, F. Bonoli, V. V. Voronkov:
Dielectric breakdown distributions for void containing silicon substrates.
967-971
Electronic Edition (link) BibTeX
- G. Innertsberger, T. Pompl, M. Kerber:
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices.
973-975
Electronic Edition (link) BibTeX
- A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, V. Petrova-Koch, Walter Hansch, H. Baumgärtner, I. Eisele:
Nitrogen implantations for rapid thermal oxinitride layers.
977-980
Electronic Edition (link) BibTeX
- L. Jalabert, Pierre Temple-Boyer, G. Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand:
Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer.
981-985
Electronic Edition (link) BibTeX
- M. P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides.
987-990
Electronic Edition (link) BibTeX
- H. J. Osten, J. P. Liu, H.-J. Müssig, P. Zaumseil:
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide.
991-994
Electronic Edition (link) BibTeX
- C. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili, Stefan De Gendt, Marc M. Heyns, O. Van Der Biest:
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction.
995-998
Electronic Edition (link) BibTeX
- N. Galbiati, G. Ghidini, C. Cremonesi, L. Larcher:
Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling.
999-1002
Electronic Edition (link) BibTeX
- D. Brazzelli, G. Ghidini, C. Riva:
Optimization of WSi2 by SiH4 CVD: impact on oxide quality.
1003-1006
Electronic Edition (link) BibTeX
- Udo Schwalke, Martin Pölzl, Thomas Sekinger, Martin Kerber:
Ultra-thick gate oxides: charge generation and its impact on reliability.
1007-1010
Electronic Edition (link) BibTeX
- R. Rodríguez, M. Porti, M. Nafría, X. Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films.
1011-1013
Electronic Edition (link) BibTeX
- M. Badila, Philippe Godignon, J. Millán, S. Berberich, G. Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices.
1015-1018
Electronic Edition (link) BibTeX
- Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger:
Quality assessment of thin oxides using constant and ramped stress measurements.
1019-1022
Electronic Edition (link) BibTeX
- D. Zander, C. Petit, F. Saigné, A. Meinertzhagen:
High field stress at and above room temperature in 2.3 nm thick oxides.
1023-1026
Electronic Edition (link) BibTeX
- R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis:
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).
1027-1030
Electronic Edition (link) BibTeX
- S. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides.
1031-1034
Electronic Edition (link) BibTeX
- F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
1035-1039
Electronic Edition (link) BibTeX
- M. Porti, X. Blasco, M. Nafría, X. Aymerich, Alexander Olbrich, Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope.
1041-1044
Electronic Edition (link) BibTeX
- Nihar R. Mohapatra, A. Dutta, G. Sridhar, Madhav P. Desai, V. Ramgopal Rao:
Sub-100 nm CMOS circuit performance with high-K gate dielectrics.
1045-1048
Electronic Edition (link) BibTeX
- A. Kumar, S. Mahapatra, R. Lal, V. R. Rao:
Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs.
1049-1051
Electronic Edition (link) BibTeX
- B. J. O'Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven:
Flat band voltage shift and oxide properties after rapid thermal annealing.
1053-1056
Electronic Edition (link) BibTeX
- V. Mikhelashvili, G. Eisenstein:
Optical and electrical characterization of the electron beam gun evaporated TiO2 film.
1057-1061
Electronic Edition (link) BibTeX
- G. Borsoni, N. Béchu, M. Gros-Jean, M. L. Korwin-Pawlowski, R. Laffitte, V. Le Roux, L. Vallier, N. Rochat, C. Wyon:
Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams.
1063-1066
Electronic Edition (link) BibTeX
- J.-W. Zahlmann-Nowitzki, L. Nebrich, P. Seegebrecht:
On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides.
1067-1069
Electronic Edition (link) BibTeX
- N. Asli, M. I. Vexler, A. F. Shulekin, P. D. Yoder, I. V. Grekhov, P. Seegebrecht:
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes.
1071-1076
Electronic Edition (link) BibTeX
- D. Hill, X. Blasco, M. Porti, M. Nafría, X. Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si.
1077-1079
Electronic Edition (link) BibTeX
- D. Weber, F. Höhnsdorf, A. Hausmann, A. Klipp, Z. Stavreva, J. Herrmann, L. Bauch, M. Junack, H. Neef, M. Nichterwitz, S. Finsterbusch:
Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization.
1081-1083
Electronic Edition (link) BibTeX
- S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel:
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices.
1085-1088
Electronic Edition (link) BibTeX
- Matthias Beichele, Anton J. Bauer, Heiner Ryssel:
Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient.
1089-1092
Electronic Edition (link) BibTeX
- J. Dabrowski, V. Zavodinsky, A. Fleszar:
Pseudopotential study of PrO2 and HfO2 in fluorite phase.
1093-1096
Electronic Edition (link) BibTeX
- B. Lanchava, P. Baumgartner, A. Martin, A. Beyer, E. Mueller:
Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation.
1097-1100
Electronic Edition (link) BibTeX
Volume 41, Number 8, August 2001
- Wallace T. Anderson, Roberto Menozzi:
Editorial.
1101
Electronic Edition (link) BibTeX
- Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers:
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing.
1103-1108
Electronic Edition (link) BibTeX
- W. T. Anderson, J. A. Roussos, J. A. Mittereder, D. E. Ioannou, C. Moglestue:
Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study.
1109-1113
Electronic Edition (link) BibTeX
- B. M. Paine, R. C. Wong, A. E. Schmitz, R. H. Walden, L. D. Nguyen, M. J. Delaney, K. C. Hum:
Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability.
1115-1122
Electronic Edition (link) BibTeX
- William J. Roesch:
Volume impacts on GaAs reliability improvement.
1123-1127
Electronic Edition (link) BibTeX
- S. Thomas III, C. H. Fields, M. Madhav:
RF modeling approach to determining end-of-life reliability for InP-based HBTs.
1129-1135
Electronic Edition (link) BibTeX
- Peter Dai, Philip Canfield:
Location of defective cells in HBT power amplifier arrays using IR emission microscopy.
1137-1141
Electronic Edition (link) BibTeX
- Daniel L. Barton, Shigeru Nakajima, Massimo Vanzi:
Editorial.
1143-1144
Electronic Edition (link) BibTeX
- Edward I. Cole Jr.:
Global fault localization using induced voltage alteration.
1145-1159
Electronic Edition (link) BibTeX
- Ingrid De Wolf, Mahmoud Rasras:
Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices.
1161-1169
Electronic Edition (link) BibTeX
- Yasuhiro Mitsui, Fumiko Yano, Hiroshi Kakibayashi, Hiroyasu Shichi, Takashi Aoyama:
Developments of new concept analytical instruments for failure analyses of sub-100 nm devices.
1171-1183
Electronic Edition (link) BibTeX
- K. Krieg, D. J. Thomson, Gregory E. Bridges:
Electrical probing of deep sub-micron integrated circuits using scanning probes.
1185-1191
Electronic Edition (link) BibTeX
- Silke Liebert:
Failure analysis from the back side of a die.
1193-1201
Electronic Edition (link) BibTeX
- Chisato Hashimoto, Takamitsu Takizawa, Sigeru Nakajima, Mitsuru Shinagawa, Tadao Nagatsuma:
Observation of the internal waveforms in high-speed high-density LSIs using an EOS prober.
1203-1209
Electronic Edition (link) BibTeX
- L. A. Knauss, A. B. Cawthorne, N. Lettsome, S. Kelly, S. Chatraphorn, E. F. Fleet, F. C. Wellstood, W. E. Vanderlinde:
Scanning SQUID microscopy for current imaging.
1211-1229
Electronic Edition (link) BibTeX
- Bernd Ebersberger, Alexander Olbrich, Christian Boit:
Scanning probe microscopy in semiconductor failure analysis.
1231-1236
Electronic Edition (link) BibTeX
- J. M. Chin, J. C. H. Phang, D. S. H. Chan, M. Palaniappan, G. Gilfeather, C. E. Soh:
Single contact optical beam induced currents.
1237-1242
Electronic Edition (link) BibTeX
- T. Koyama, M. Umeno, K. Sonoda, J. Komori, Y. Mashiko:
Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique.
1243-1253
Electronic Edition (link) BibTeX
- Yuan Ji, Ziguo Li, Dong Wang, Yaohai Cheng, Dong Luo, Bin Zong:
Scanning thermal microscopy studies of local temperature distribution of micron-sized metallization lines.
1255-1258
Electronic Edition (link) BibTeX
- M. K. Mazumder, S. Yamamoto, H. Maeda, J. Komori, Y. Mashiko:
Mechanism of pre-annealing effect on electromigration immunity of Al-Cu line.
1259-1264
Electronic Edition (link) BibTeX
- Hide Murayama, Makoto Yamazaki, Shigeru Nakajima:
Electromigration and electrochemical reaction mixed failure mechanism in gold interconnection system.
1265-1272
Electronic Edition (link) BibTeX
Volume 41, Numbers 9-10, September - October 2001
- Lifeng Wu, Zhihong Liu:
Full-Chip Reliability Simulation for VDSM Integrated Circuits.
1273-1278 BibTeX
- Per-Olof Fägerholt:
Reliability improvements in passive components.
1279-1288 BibTeX
- A. Muehlhoff:
An Extrapolation Model for Lifetime Prediction for Off-State - Degradation of MOS-FETs.
1289-1293 BibTeX
- F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
1295-1300 BibTeX
- Young Pil Kim, Beom Jun Jin, Young Wook Park, Joo Tae Moon, Sang U. Kim:
Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs.
1301-1305 BibTeX
- N. Revil, X. Garros:
Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications.
1307-1312 BibTeX
- A. Bravaix, D. Goguenheim, N. Revil, E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
1313-1318 BibTeX
- H. Puchner, Y.-C. Liu, W. Kong, F. Duan, R. Castagnetti:
Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies.
1319-1324 BibTeX
- Hamid Toutah, Jean-François Llibre, Boubekeur Tala-Ighil, Taieb Mohammed-Brahim, Youri Helen, G. Gautier, Olivier Bonnaud:
Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating.
1325-1329 BibTeX
- Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud:
Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS.
1331-1334 BibTeX
- Xavier Gagnard, Yannick Rey-Tauriac, Olivier Bonnaud:
Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology.
1335-1340 BibTeX
- M. Nakabayashi, H. Ohyama, E. Simoen, M. Ikegami, C. Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara:
Reliability of polycrystalline silicon thin film resistors.
1341-1346 BibTeX
- A. Ghetti, M. Alam, J. Bude:
Anode hole generation mechanisms.
1347-1354 BibTeX
- D. Zander, F. Saigné, A. Meinertzhagen:
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.
1355-1360 BibTeX
- M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics.
1361-1366 BibTeX
- S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven?
1367-1372 BibTeX
- Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev:
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs.
1373-1378 BibTeX
- K. Gonf, H. G. Feng, R. Y. Zhan, A. Z. Wang:
ESD-Induced Circuit Performance Degradation in RFICs.
1379-1383 BibTeX
- Martin Litzenberger, R. Pichler, Scrgey Bychikhin, Dionyz Pogany, E. Gornik, K. Esmark, Harald Gossner:
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices.
1385-1390 BibTeX
- N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan:
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.
1391-1396 BibTeX
- Joachim C. Reiner, Thomas Keller:
Relevance of contact reliability in HBM-ESD test equipment.
1397-1401 BibTeX
- Jan Ackaert, Z. Wang, Eddy De Backer, P. Colson, Peter Coppens:
Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors.
1403-1407 BibTeX
- S. Yokogawa, N. Okada, Y. Kakuhara, H. Takizawa:
Electromigration Performance of Multi-level Damascene Copper Interconnects.
1409-1416 BibTeX
- F. Dieudonné, F. Daugé, J. Jomaah, C. Raynaud, F. Balestra:
An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's.
1417-1420 BibTeX
- F. Lime, G. Ghibaudo, G. Guégan:
Stress induced leakage current at low field in ultra thin oxides.
1421-1425 BibTeX
- G. Chen, M. F. Li, Y. Jin:
Electric passivation of interface traps at drain junction space charge region in p-MOS transistors.
1427-1431 BibTeX
- A. Guilhaume, P. Galy, J. P. Chante, B. Foucher, F. Blanc:
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges.
1433-1437 BibTeX
- K. Croes, R. Dreesen, J. Manca, Ward De Ceuninck, Luc De Schepper, L. Tielemans, P. van Der Wel:
High-resolution in-situ of gold electromigration: test time reduction.
1439-1442 BibTeX
- H. Ohyama, M. Nakabayashi, E. Simoen, C. Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi:
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.
1443-1448 BibTeX
- Bernd Ebersberger, Alexander Olbrich, Christian Boit:
Application of Scanning Probe Microscopy techniques in Semiconductor Failure Analysis.
1449-1458 BibTeX
- H. Yabuhara, Mauro Ciappa, Wolfgang Fichtner:
Diamond-Coated Cantilevers for Scanning Capacitance Microscopy Applications.
1459-1463 BibTeX
- J. C. Tsang, Massimo V. Fischetti:
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies.
1465-1470 BibTeX
- D. Lewis, V. Pouget, T. Beauchêne, Hervé Lapuyade, P. Fouillat, A. Touboul, Felix Beaudoin, Philippe Perdu:
Front Side and Backside OBIT Mappings applied to Single Event Transient Testing.
1471-1476 BibTeX
- Felix Beaudoin, X. Chauffleur, J. P. Fradin, Philippe Perdu, Romain Desplats, D. Lewis:
Modeling Thermal Laser Stimulation.
1477-1482 BibTeX
- C.-C. Tsao, Q. S. Wang, P. Bouchet, P. Sudraud:
Coaxial Ion-Photon System.
1483-1488 BibTeX
- Katsuyoshi Miura, Koji Nakamae, Hiromu Fujioka:
Development of an EB/FIB Integrated Test System.
1489-1494 BibTeX
- Romain Desplats, Philippe Perdu, Felix Beaudoin:
A New Versatile Testing Interface for Failure Analysis in Integrated Circuits.
1495-1499 BibTeX
- Scrgey Bychikhin, Martin Litzenberger, R. Pichler, Dionyz Pogany, E. Gornik, G. Groos, M. Stecher:
Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures.
1501-1506 BibTeX
- Norman Goldblatt, Martin Leibowitz, William Lo:
Unique and Practical IC Timing Analysis Tool Utilizing Intrinsic Photon Emission.
1507-1512 BibTeX
- V. Pouget, Hervé Lapuyade, P. Fouillat, D. Lewis, S. Buchner:
Theoretical Investigation of an Equivalent Laser LET.
1513-1518 BibTeX
- M. Zmeck, J. Phang, A. Bettiol, T. Osipowicz, F. Watt, L. Balk, F.-J. Niedernostheide, H.-J. Schulze, E. Falck, R. Barthelmess:
Analysis of high-power devices using proton beam induced charge microscopy.
1519-1524 BibTeX
- Kazuko Ikeda:
Evaluation method for the control of process induced defect in deep sub-micron device fabrication.
1525-1533 BibTeX
- M. Leicht, G. Fritzer, B. Basnar, S. Golka, J. Smoliner:
A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices.
1535-1537 BibTeX
- Romain Desplats, Felix Beaudoin, Philippe Perdu, P. Poirier, D. Trémouilles, M. Bafleur, D. Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation.
1539-1544 BibTeX
- T. Lundquist, E. Delenia, J. Harroun, E. LeRoy, C.-C. Tsao:
Ultra-Thinning of C4 Integrated Circuits for Backside Analysis during First Silicon Debug.
1545-1549 BibTeX
- Jon C. Lee, David Su, J. H. Chuang:
A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis.
1551-1556 BibTeX
- Felix Beaudoin, Philippe Perdu, Romain Desplats, S. Rigo, D. Lewis:
Silicon Thinning and Polishing on Packaged Devices.
1557-1561 BibTeX
- A. Scavennec:
Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits.
1563-1566 BibTeX
- Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, S. L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland:
Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT.
1567-1571 BibTeX
- B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.
1573-1578 BibTeX
- Gaudenzio Meneghesso, Gaudenzio Chini, Enrico Zanoni:
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs.
1579-1584 BibTeX
Volume 41, Number 11, November 2001
- Markus P. J. Mergens:
Foreword - On-Chip ESD.
1737
Electronic Edition (link) BibTeX
- Koen G. Verhaege, Christian C. Russ:
Novel fully silicided ballasting and MFT design techniques for ESD protection in advanced deep sub-micron CMOS technologies.
1739-1749
Electronic Edition (link) BibTeX
- James W. Miller, Michael G. Khazhinsky, James C. Weldon:
Layout and bias options for maximizing Vt1 in cascoded NMOS output buffers.
1751-1760
Electronic Edition (link) BibTeX
- K. Esmark, Wolfgang Stadler, M. Wendel, Harald Gossner, X. Guggenmos, Wolfgang Fichtner:
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase.
1761-1770
Electronic Edition (link) BibTeX
- Jie Wu, Patrick Juliano, Elyse Rosenbaum:
Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions.
1771-1779
Electronic Edition (link) BibTeX
- Yu Wang, Patrick Juliano, Sopan Joshi, Elyse Rosenbaum:
Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits.
1781-1787
Electronic Edition (link) BibTeX
- Leo G. Henry, Mark A. Kelly, Tom Diep, Jon Barth:
The importance of standardizing CDM ESD test head parameters to obtain data correlation.
1789-1800
Electronic Edition (link) BibTeX
- Franco Stellari, F. Zappa, S. Cova, L. Vendrame:
Tools for contactless testing and simulation of CMOS circuits.
1801-1808
Electronic Edition (link) BibTeX
- Fernanda Irrera:
Electrical degradation and recovery of dielectrics in n++-poly-Si/SiOx/SiO2/p-sub structures designed for application in low-voltage non-volatile memories.
1809-1813
Electronic Edition (link) BibTeX
- F. A. Stam, E. Davitt:
Effects of thermomechanical cycling on lead and lead-free (SnPb and SnAgCu) surface mount solder joints.
1815-1822
Electronic Edition (link) BibTeX
- Kendall D. Hester, Matthew P. Koehler, Hanna Kanciak-Chwialkowski, Brian H. Jones:
An assessment of the value of added screening of electronic components for commercial aerospace applications.
1823-1828
Electronic Edition (link) BibTeX
- Dominique Wojciechowski, Moses Chan, Fabrizio Martone:
Lead-free plastic area array BGAs and polymer stud grid arraysTM package reliability.
1829-1839
Electronic Edition (link) BibTeX
- X. Tang, X. Baie, J. P. Colinge, P. Loumaye, C. Renaux, V. Bayot:
Influence of device geometry on SOI single-hole transistor characteristics.
1841-1846
Electronic Edition (link) BibTeX
- Deborah M. Mechtel, Harry K. Charles Jr., Arthur S. Francomacaro:
The development of poled polyimide dielectric layers for simultaneous testing and light guiding applications in MCM-Ds.
1847-1855
Electronic Edition (link) BibTeX
- Mahamane Kader, Michel Lenczner, Zeljko Mrcarica:
Distributed control based on distributed electronic circuits: application to vibration control.
1857-1866
Electronic Edition (link) BibTeX
- Y. C. Chan, P. L. Tu, K. C. Hung:
Study of the self-alignment of no-flow underfill for micro-BGA assembly.
1867-1875
Electronic Edition (link) BibTeX
- Piotr Bratek, Andrzej Kos:
A method of thermal testing of microsystems.
1877-1887
Electronic Edition (link) BibTeX
- Bing-Yue Tsui, Tsung-Ju Yang, Tzu-Kun Ku:
Impact of interface nature on deep sub-micron Al-plug resistance.
1889-1896
Electronic Edition (link) BibTeX
- Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang, Chih-Kai Wang, Wen-Huei Chiou, Wen-Chau Liu:
On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations.
1897-1902
Electronic Edition (link) BibTeX
- Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan:
Effect of SiO2/Si interface roughness on gate current.
1903-1907
Electronic Edition (link) BibTeX
- Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan:
A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd.
1909-1913
Electronic Edition (link) BibTeX
Volume 41, Number 12, December 2001
- Alexander Ambatiello, Josef Deichler:
Low and high temperature device reliability investigations of buried p-channel MOSFETs of a 0.17 mum technology.
1915-1921
Electronic Edition (link) BibTeX
- Gennadi Bersuker, Yongjoo Jeon, Howard R. Huff:
Degradation of thin oxides during electrical stress.
1923-1931
Electronic Edition (link) BibTeX
- M. Da Rold, E. Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere:
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS.
1933-1938
Electronic Edition (link) BibTeX
- Zhenqiu Ning, Yuri Sneyders, Wim Vanderbauwhede, Renaud Gillon, Marnix Tack, Paul Raes:
A compact test structure for characterisation of leakage currents in sub-micron CMOS technologies.
1939-1945
Electronic Edition (link) BibTeX
- Z. Chobola:
Noise as a tool for non-destructive testing of single-crystal silicon solar cells.
1947-1952
Electronic Edition (link) BibTeX
- Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique.
1953-1957
Electronic Edition (link) BibTeX
- B. P. Yan, Y. F. Yang, C. C. Hsu, H. B. Lo, E. S. Yang:
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge.
1959-1963
Electronic Edition (link) BibTeX
- D. Fedasyuk, E. Levus, D. Petrov:
Flip-chip structure transient thermal model.
1965-1970
Electronic Edition (link) BibTeX
- Piotr Dziurdzia, Andrzej Kos:
Monitoring of power dissipated in microelectronic structures.
1971-1978
Electronic Edition (link) BibTeX
- Xingsheng Liu, Shuangyan Xu, Guo-Quan Lu, David A. Dillard:
Stacked solder bumping technology for improved solder joint reliability.
1979-1992
Electronic Edition (link) BibTeX
- P. L. Tu, Y. C. Chan, K. C. Hung:
Reliability of microBGA assembly using no-flow underfill.
1993-2000
Electronic Edition (link) BibTeX
- Shyh-Ming Chang, Jwo-Huei Jou, Adam Hsieh, Tai-Hong Chen, Ching-Yun Chang, Yung-Hao Wang, Chun-Ming Huang:
Characteristic study of anisotropic-conductive film for chip-on-film packaging.
2001-2009
Electronic Edition (link) BibTeX
- W. D. Zhuang, P. C. Chang, F. Y. Chou, R. K. Shiue:
Effect of solder creep on the reliability of large area die attachment.
2011-2021
Electronic Edition (link) BibTeX
- Mykola Blyzniuk, Irena Kazymyra, Wieslaw Kuzmicz, Witold A. Pleskacz, Jaan Raik, Raimund Ubar:
Probabilistic analysis of CMOS physical defects in VLSI circuits for test coverage improvement.
2023-2040
Electronic Edition (link) BibTeX
- S. Dordevic, P. Petkovic:
A hierarchical approach to large circuit symbolic simulation.
2041-2049
Electronic Edition (link) BibTeX
- Robert I. Damper, Richard L. B. French, Tom W. Scutt:
The Hi-NOON neural simulator and its applications.
2051-2065
Electronic Edition (link) BibTeX
- Bharatwaj Ramakrishnan, Peter Sandborn, Michael G. Pecht:
Process capability indices and product reliability.
2067-2070
Electronic Edition (link) BibTeX
- M. C. Poon, Y. Gao, T. C. W. Kok, A. M. Myasnikov, Hei Wong:
SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer.
2071-2074
Electronic Edition (link) BibTeX
Copyright © Sun May 17 00:14:09 2009
by Michael Ley (ley@uni-trier.de)