| 2003 |
|---|
| 5 | EE | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
| 2002 |
|---|
| 4 | EE | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Gate oxide Reliability assessment optimization.
Microelectronics Reliability 42(9-11): 1505-1508 (2002) |
| 2001 |
|---|
| 3 | EE | R. Clerc,
A. S. Spinelli,
G. Ghibaudo,
C. Leroux,
G. Pananakakis:
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).
Microelectronics Reliability 41(7): 1027-1030 (2001) |
| 2 | EE | F. Monsieur,
E. Vincent,
G. Pananakakis,
G. Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectronics Reliability 41(7): 1035-1039 (2001) |
| 1 | | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectronics Reliability 41(9-10): 1295-1300 (2001) |
