| 2006 |
|---|
| 4 | EE | T. Pompl,
C. Schlünder,
M. Hommel,
H. Nielen,
J. Schneider:
Practical aspects of reliability analysis for IC designs.
DAC 2006: 193-198 |
| 3 | EE | T. Pompl,
A. Kerber,
M. Röhner,
M. Kerber:
Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides.
Microelectronics Reliability 46(9-11): 1603-1607 (2006) |
| 2001 |
|---|
| 2 | EE | T. Pompl,
C. Engel,
H. Wurzer,
M. Kerber:
Soft breakdown and hard breakdown in ultra-thin oxides.
Microelectronics Reliability 41(4): 543-551 (2001) |
| 1 | EE | G. Innertsberger,
T. Pompl,
M. Kerber:
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices.
Microelectronics Reliability 41(7): 973-975 (2001) |
