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B. Foucher

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2006
4EEB. Foucher, J. Tomas, F. Mounsi, M. Jeremias: Life margin assessment with Physics of Failure Tools application to BGA packages. Microelectronics Reliability 46(5-6): 1013-1018 (2006)
2002
3EEB. Foucher, J. Boullié, B. Meslet, D. Das: A review of reliability prediction methods for electronic devices. Microelectronics Reliability 42(8): 1155-1162 (2002)
2EEP. Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy, F. Blanc: Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse. Microelectronics Reliability 42(9-11): 1299-1302 (2002)
2001
1 A. Guilhaume, P. Galy, J. P. Chante, B. Foucher, F. Blanc: Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges. Microelectronics Reliability 41(9-10): 1433-1437 (2001)

Coauthor Index

1S. Bardy [2]
2V. Berland [2]
3F. Blanc [1] [2]
4J. Boullié [3]
5J. P. Chante [1] [2]
6D. Das [3]
7P. Galy [1] [2]
8A. Guilhaume [1] [2]
9M. Jeremias [4]
10B. Meslet [3]
11F. Mounsi [4]
12J. Tomas [4]

Colors in the list of coauthors

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)