| 2006 |
|---|
| 4 | EE | B. Foucher,
J. Tomas,
F. Mounsi,
M. Jeremias:
Life margin assessment with Physics of Failure Tools application to BGA packages.
Microelectronics Reliability 46(5-6): 1013-1018 (2006) |
| 2002 |
|---|
| 3 | EE | B. Foucher,
J. Boullié,
B. Meslet,
D. Das:
A review of reliability prediction methods for electronic devices.
Microelectronics Reliability 42(8): 1155-1162 (2002) |
| 2 | EE | P. Galy,
V. Berland,
B. Foucher,
A. Guilhaume,
J. P. Chante,
S. Bardy,
F. Blanc:
Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse.
Microelectronics Reliability 42(9-11): 1299-1302 (2002) |
| 2001 |
|---|
| 1 | | A. Guilhaume,
P. Galy,
J. P. Chante,
B. Foucher,
F. Blanc:
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges.
Microelectronics Reliability 41(9-10): 1433-1437 (2001) |
