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| 2001 | ||
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| 1 | EE | Alexander N. Bubennikov, Andrey V. Zykov: Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect. Microelectronics Reliability 41(2): 219-228 (2001) |
| 1 | Andrey V. Zykov | [1] |