| |
| 2006 | ||
|---|---|---|
| 3 | EE | T. Pompl, A. Kerber, M. Röhner, M. Kerber: Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. Microelectronics Reliability 46(9-11): 1603-1607 (2006) |
| 2001 | ||
| 2 | EE | T. Pompl, C. Engel, H. Wurzer, M. Kerber: Soft breakdown and hard breakdown in ultra-thin oxides. Microelectronics Reliability 41(4): 543-551 (2001) |
| 1 | EE | G. Innertsberger, T. Pompl, M. Kerber: The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. Microelectronics Reliability 41(7): 973-975 (2001) |
| 1 | C. Engel | [2] |
| 2 | G. Innertsberger | [1] |
| 3 | A. Kerber | [3] |
| 4 | T. Pompl | [1] [2] [3] |
| 5 | M. Röhner | [3] |
| 6 | H. Wurzer | [2] |