Jimmie J. Wortman

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2001

1 EE Nian Yang, Jimmie J. Wortman: A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs. Microelectronics Reliability 41(1): 37-46 (2001)

2001
1	EE	Nian Yang, Jimmie J. Wortman: A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs. Microelectronics Reliability 41(1): 37-46 (2001)

Coauthor Index

1 Nian Yang [1]