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| 2002 | ||
|---|---|---|
| 2 | EE | B. Cretu, F. Balestra, G. Ghibaudo, G. Guégan: Origin of hot carrier degradation in advanced nMOSFET devices. Microelectronics Reliability 42(9-11): 1405-1408 (2002) |
| 2001 | ||
| 1 | M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo: Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability 41(9-10): 1361-1366 (2001) | |
| 1 | F. Balestra | [2] |
| 2 | T. Devoivre | [1] |
| 3 | M. Fadlallah | [1] |
| 4 | G. Ghibaudo | [1] [2] |
| 5 | C. Giannakopoulos | [1] |
| 6 | G. Guégan | [2] |
| 7 | J. Jomaah | [1] |
| 8 | F. Monsieur | [1] |
| 9 | A. Szewczyk | [1] |