![]() | ![]() |
2002 | ||
---|---|---|
2 | EE | B. Cretu, F. Balestra, G. Ghibaudo, G. Guégan: Origin of hot carrier degradation in advanced nMOSFET devices. Microelectronics Reliability 42(9-11): 1405-1408 (2002) |
2001 | ||
1 | M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo: Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability 41(9-10): 1361-1366 (2001) |
1 | F. Balestra | [2] |
2 | T. Devoivre | [1] |
3 | M. Fadlallah | [1] |
4 | G. Ghibaudo | [1] [2] |
5 | C. Giannakopoulos | [1] |
6 | G. Guégan | [2] |
7 | J. Jomaah | [1] |
8 | F. Monsieur | [1] |
9 | A. Szewczyk | [1] |