| 2006 |
|---|
| 6 | EE | X. Perpiñà,
J. F. Serviere,
J. Saiz,
D. Barlini,
Michel Mermet-Guyennet,
J. Millán:
Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current.
Microelectronics Reliability 46(9-11): 1834-1839 (2006) |
| 2004 |
|---|
| 5 | EE | X. Perpiñà,
X. Jordà,
N. Mestres,
M. Vellvehí,
Philippe Godignon,
J. Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.
Microelectronics Journal 35(10): 841-847 (2004) |
| 4 | EE | J. Roig,
D. Flores,
S. Hidalgo,
J. Rebollo,
J. Millán:
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.
Microelectronics Journal 35(3): 291-297 (2004) |
| 3 | EE | A. Pérez-Tomás,
X. Jordà,
Philippe Godignon,
J. L. Gálvez,
M. Vellvehí,
J. Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.
Microelectronics Journal 35(8): 659-666 (2004) |
| 2002 |
|---|
| 2 | EE | J. Roig,
D. Flores,
M. Vellvehí,
J. Rebollo,
J. Millán:
Reduction of self-heating effect on SOIM devices.
Microelectronics Reliability 42(1): 61-66 (2002) |
| 2001 |
|---|
| 1 | EE | M. Badila,
Philippe Godignon,
J. Millán,
S. Berberich,
G. Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices.
Microelectronics Reliability 41(7): 1015-1018 (2001) |
