2006 |
5 | EE | A. S. Oates,
S. C. Lee:
Electromigration failure distributions of dual damascene Cu /low - k interconnects.
Microelectronics Reliability 46(9-11): 1581-1586 (2006) |
2004 |
4 | EE | M. M. De Souza,
S. K. Manhas,
D. Chandra Sekhar,
A. S. Oates,
Prasad Chaparala:
Influence of mobility model on extraction of stress dependent source-drain series resistance.
Microelectronics Reliability 44(1): 25-32 (2004) |
2003 |
3 | EE | S. K. Manhas,
D. Chandra Sekhar,
A. S. Oates,
M. M. De Souza:
Characterisation of series resistance degradation through charge pumping technique.
Microelectronics Reliability 43(4): 617-624 (2003) |
2001 |
2 | EE | Wei Li,
Qiang Li,
J. S. Yuan,
Joshua McConkey,
Yuan Chen,
Sundar Chetlur,
Jonathan Zhou,
A. S. Oates:
Hot-carrier-Induced Circuit Degradation for 0.18 ?m CMOS Technology.
ISQED 2001: 284-289 |
1 | EE | M. M. De Souza,
J. Wang,
S. K. Manhas,
E. M. Sankara Narayanan,
A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.
Microelectronics Reliability 41(2): 169-177 (2001) |