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A. Guilhaume

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2002
2EEP. Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy, F. Blanc: Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse. Microelectronics Reliability 42(9-11): 1299-1302 (2002)
2001
1 A. Guilhaume, P. Galy, J. P. Chante, B. Foucher, F. Blanc: Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges. Microelectronics Reliability 41(9-10): 1433-1437 (2001)

Coauthor Index

1S. Bardy [2]
2V. Berland [2]
3F. Blanc [1] [2]
4J. P. Chante [1] [2]
5B. Foucher [1] [2]
6P. Galy [1] [2]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)