| 2003 |
|---|
| 4 | EE | D. Zander,
F. Saigné,
A. Meinertzhagen,
C. Petit:
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.
Microelectronics Reliability 43(9-11): 1489-1493 (2003) |
| 2002 |
|---|
| 3 | EE | F. Saigné,
Olivier Quittard,
Laurent Dusseau,
F. Joffre,
C. Oudéa,
J. Fesquet,
Jean Gasiot:
Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements.
Microelectronics Reliability 42(3): 459-461 (2002) |
| 2001 |
|---|
| 2 | EE | D. Zander,
C. Petit,
F. Saigné,
A. Meinertzhagen:
High field stress at and above room temperature in 2.3 nm thick oxides.
Microelectronics Reliability 41(7): 1023-1026 (2001) |
| 1 | | D. Zander,
F. Saigné,
A. Meinertzhagen:
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.
Microelectronics Reliability 41(9-10): 1355-1360 (2001) |
