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| 2001 | ||
|---|---|---|
| 1 | EE | A. C. Lamb, J. F. W. Schiz, J. M. Bonar, F. Cristiano, P. Ashburn, S. Hall, P. L. F. Hemment: Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. Microelectronics Reliability 41(2): 273-279 (2001) |
| 1 | P. Ashburn | [1] |
| 2 | F. Cristiano | [1] |
| 3 | S. Hall | [1] |
| 4 | P. L. F. Hemment | [1] |
| 5 | A. C. Lamb | [1] |
| 6 | J. F. W. Schiz | [1] |