2007 | ||
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3 | EE | R. Kinder, F. Schwierz, P. Beno, J. Geßner: Simulation of boron diffusion in Si and strained SiGe layers. Microelectronics Journal 38(4-5): 576-582 (2007) |
2 | EE | F. Schwierz, C. Schippel: Performance trends of Si-based RF transistors. Microelectronics Reliability 47(2-3): 384-390 (2007) |
2001 | ||
1 | EE | F. Schwierz, Juin J. Liou: Semiconductor devices for RF applications: evolution and current status. Microelectronics Reliability 41(2): 145-168 (2001) |
1 | P. Beno | [3] |
2 | J. Geßner | [3] |
3 | R. Kinder | [3] |
4 | Juin J. Liou | [1] |
5 | C. Schippel | [2] |