| 2001 |
|---|
| 3 | EE | A. Teramoto,
H. Umeda,
K. Azamawari,
K. Kobayashi,
K. Shiga,
J. Komori,
Y. Ohno,
A. Shigetomi:
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range.
Microelectronics Reliability 41(1): 47-52 (2001) |
| 2 | EE | T. Koyama,
M. Umeno,
K. Sonoda,
J. Komori,
Y. Mashiko:
Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique.
Microelectronics Reliability 41(8): 1243-1253 (2001) |
| 1 | EE | M. K. Mazumder,
S. Yamamoto,
H. Maeda,
J. Komori,
Y. Mashiko:
Mechanism of pre-annealing effect on electromigration immunity of Al-Cu line.
Microelectronics Reliability 41(8): 1259-1264 (2001) |
