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| 2001 | ||
|---|---|---|
| 1 | EE | M. Badila, Philippe Godignon, J. Millán, S. Berberich, G. Brezeanu: The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability 41(7): 1015-1018 (2001) |
| 1 | M. Badila | [1] |
| 2 | G. Brezeanu | [1] |
| 3 | Philippe Godignon | [1] |
| 4 | J. Millán | [1] |