| 2006 |
|---|
| 4 | EE | M. I. Vexler,
A. El Hdiy,
D. Grgec,
S. E. Tyaginov,
R. Khlil,
Bernd Meinerzhagen,
A. F. Shulekin,
I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures.
Microelectronics Journal 37(2): 114-120 (2006) |
| 3 | EE | S. E. Tyaginov,
M. I. Vexler,
A. F. Shulekin,
I. V. Grekhov:
The post-damage behavior of a MOS tunnel emitter transistor.
Microelectronics Reliability 46(7): 1035-1041 (2006) |
| 2004 |
|---|
| 2 | EE | R. Khlil,
A. El Hdiy,
A. F. Shulekin,
S. E. Tyaginov,
M. I. Vexler:
Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness.
Microelectronics Reliability 44(3): 543-546 (2004) |
| 2001 |
|---|
| 1 | EE | N. Asli,
M. I. Vexler,
A. F. Shulekin,
P. D. Yoder,
I. V. Grekhov,
P. Seegebrecht:
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes.
Microelectronics Reliability 41(7): 1071-1076 (2001) |
