| |
| 2001 | ||
|---|---|---|
| 1 | EE | L. Jalabert, Pierre Temple-Boyer, G. Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand: Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. Microelectronics Reliability 41(7): 981-985 (2001) |
| 1 | C. Armand | [1] |
| 2 | F. Cristiano | [1] |
| 3 | L. Jalabert | [1] |
| 4 | G. Sarrabayrouse | [1] |
| 5 | Pierre Temple-Boyer | [1] |
| 6 | F. Voillot | [1] |