2006 |
6 | EE | G. Golan,
A. Axelevitch,
B. Gorenstein:
Si-C multilayer quasi crystals preparation by DC magnetron sputtering.
Microelectronics Journal 37(12): 1538-1542 (2006) |
5 | EE | G. Golan,
A. Axelevitch,
B. Gorenstein,
V. Manevych:
Hot-Probe method for evaluation of impurities concentration in semiconductors.
Microelectronics Journal 37(9): 910-915 (2006) |
2003 |
4 | EE | G. Golan,
A. Axelevitch,
B. Sigalov,
B. Gorenstein:
Metal-insulator phase transition in vanadium oxides films.
Microelectronics Journal 34(4): 255-258 (2003) |
3 | EE | G. Golan,
A. Axelevitch,
B. Sigalov,
B. Gorenstein:
Integrated thin film heater-thermocouple systems.
Microelectronics Reliability 43(3): 509-512 (2003) |
2001 |
2 | EE | G. Golan,
E. Rabinovich,
A. Inberg,
A. Axelevitch,
G. Lubarsky,
P. G. Rancoita,
M. Demarchi,
A. Seidman,
N. Croitoru:
Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors.
Microelectronics Reliability 41(1): 67-72 (2001) |
1 | EE | G. Golan,
A. Axelevitch,
E. Rabinovitch:
Effects of electron beam generated in vacuum photo-thermal processing on metal-silicon contacts.
Microelectronics Reliability 41(6): 871-879 (2001) |