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2001 | ||
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2 | EE | A. C. Lamb, J. F. W. Schiz, J. M. Bonar, F. Cristiano, P. Ashburn, S. Hall, P. L. F. Hemment: Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. Microelectronics Reliability 41(2): 273-279 (2001) |
1 | EE | L. Jalabert, Pierre Temple-Boyer, G. Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand: Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. Microelectronics Reliability 41(7): 981-985 (2001) |
1 | C. Armand | [1] |
2 | P. Ashburn | [2] |
3 | J. M. Bonar | [2] |
4 | B. Colombeau | [1] |
5 | S. Hall | [2] |
6 | P. L. F. Hemment | [2] |
7 | L. Jalabert | [1] |
8 | A. C. Lamb | [2] |
9 | G. Sarrabayrouse | [1] |
10 | J. F. W. Schiz | [2] |
11 | Pierre Temple-Boyer | [1] |
12 | F. Voillot | [1] |