2009 |
7 | EE | R. Venkatraman,
R. Castagnetti,
Andres Teene,
Benjamin Mbouombouo,
S. Ramesh:
Power & variability test chip architecture and 45nm-generation silicon-based analysis for robust, power-aware SoC design.
ISQED 2009: 27-32 |
2006 |
6 | EE | R. Venkatraman,
R. Castagnetti,
S. Ramesh:
The Statistics of Device Variations and its Impact on SRAM Bitcell Performance, Leakage and Stability.
ISQED 2006: 190-195 |
2005 |
5 | EE | R. Castagnetti,
R. Venkatraman,
B. Bartz,
C. Monzel,
T. Briscoe,
Andres Teene,
S. Ramesh:
A High-Performance SRAM Technology With Reduced Chip-Level Routing Congestion for SoC.
ISQED 2005: 193-196 |
4 | EE | Andres Teene,
Bob Davis,
R. Castagnetti,
J. Brown,
S. Ramesh:
Impact of Interconnect Process Variations on Memory Performance and Design.
ISQED 2005: 694-699 |
2003 |
3 | EE | F. Duan,
R. Castagnetti,
R. Venkatraman,
O. Kobozeva,
S. Ramesh:
Design and Use of Memory-Specific Test Structures to Ensure SRAM Yield and Manufacturability.
ISQED 2003: 119-124 |
2001 |
2 | | H. Puchner,
Y.-C. Liu,
W. Kong,
F. Duan,
R. Castagnetti:
Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies.
Microelectronics Reliability 41(9-10): 1319-1324 (2001) |
1994 |
1 | | Piero Malcovati,
R. Castagnetti,
Henry Baltes,
Carlos Azeredo Leme,
Franco Maloberti:
Switched Capacitor Dual-Collector Magnetotransistors.
ISCAS 1994: 595-598 |