Kin P. Cheung

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2001

2 EE Kin P. Cheung: Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. Microelectronics Reliability 41(2): 193-199 (2001)

1 EE Kin P. Cheung: Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. Microelectronics Reliability 41(5): 745-749 (2001)

2001
2	EE	Kin P. Cheung: Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. Microelectronics Reliability 41(2): 193-199 (2001)
1	EE	Kin P. Cheung: Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. Microelectronics Reliability 41(5): 745-749 (2001)