Hongxia Ren

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2001

1 EE Hongxia Ren, Yue Hao: Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET's. Microelectronics Reliability 41(4): 597-604 (2001)

2001
1	EE	Hongxia Ren, Yue Hao: Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET's. Microelectronics Reliability 41(4): 597-604 (2001)

Coauthor Index

1 Yue Hao [1]