| |
| 2001 | ||
|---|---|---|
| 2 | EE | J.-W. Zahlmann-Nowitzki, L. Nebrich, P. Seegebrecht: On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides. Microelectronics Reliability 41(7): 1067-1069 (2001) |
| 1 | EE | N. Asli, M. I. Vexler, A. F. Shulekin, P. D. Yoder, I. V. Grekhov, P. Seegebrecht: Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. Microelectronics Reliability 41(7): 1071-1076 (2001) |
| 1 | N. Asli | [1] |
| 2 | I. V. Grekhov | [1] |
| 3 | L. Nebrich | [2] |
| 4 | A. F. Shulekin | [1] |
| 5 | M. I. Vexler | [1] |
| 6 | P. D. Yoder | [1] |
| 7 | J.-W. Zahlmann-Nowitzki | [2] |