2007 |
8 | EE | Joaquín Alvarado,
Antonio Cerdeira,
Valeria Kilchytska,
Denis Flandre:
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs.
Microelectronics Journal 38(3): 321-326 (2007) |
2003 |
7 | EE | Magali Estrada,
A. Afzalian,
Denis Flandre,
Antonio Cerdeira,
H. Baez,
A. de Lucca:
FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode.
Microelectronics Reliability 43(2): 189-193 (2003) |
6 | EE | R. García,
Magali Estrada,
Antonio Cerdeira:
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers.
Microelectronics Reliability 43(8): 1281-1287 (2003) |
2002 |
5 | EE | F. S. Lomeli,
Antonio Cerdeira:
Precise SPICE macromodel applied to high-voltage power MOSFET.
Microelectronics Reliability 42(1): 149-152 (2002) |
4 | EE | Rodolfo Quintero,
Antonio Cerdeira,
Adelmo Ortiz-Conde:
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors.
Microelectronics Reliability 42(1): 67-76 (2002) |
3 | EE | Juin J. Liou,
R. Shireen,
Adelmo Ortiz-Conde,
F. J. García Sánchez,
Antonio Cerdeira,
Xiaofang Gao,
Xuecheng Zou,
C. S. Ho:
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Microelectronics Reliability 42(3): 343-347 (2002) |
2 | EE | Adelmo Ortiz-Conde,
F. J. García Sánchez,
Juin J. Liou,
Antonio Cerdeira,
Magali Estrada,
Y. Yue:
A review of recent MOSFET threshold voltage extraction methods.
Microelectronics Reliability 42(4-5): 583-596 (2002) |
2001 |
1 | EE | Magali Estrada,
Antonio Cerdeira,
Adelmo Ortiz-Conde,
Francisco García:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
Microelectronics Reliability 41(4): 605-610 (2001) |