| 2006 |
|---|
| 8 | EE | Yao Zhao,
Mingzhen Xu,
Changhua Tan:
Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes.
Microelectronics Reliability 46(1): 164-168 (2006) |
| 2002 |
|---|
| 7 | EE | Lingfeng Mao,
Heqiu Zhang,
Changhua Tan,
Mingzhen Xu:
The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures.
Microelectronics Reliability 42(2): 175-181 (2002) |
| 6 | EE | Fuchen Mu,
Mingzhen Xu,
Changhua Tan,
Xiaorong Duan:
Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction.
Microelectronics Reliability 42(6): 985-989 (2002) |
| 5 | EE | Lingfeng Mao,
Changhua Tan,
Mingzhen Xu:
Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931].
Microelectronics Reliability 42(6): 991 (2002) |
| 2001 |
|---|
| 4 | EE | Fuchen Mu,
Changhua Tan,
Mingzhen Xu:
Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions.
Microelectronics Reliability 41(1): 129-131 (2001) |
| 3 | EE | Lingfeng Mao,
Yao Yang,
Jian-Lin Wei,
Heqiu Zhang,
Mingzhen Xu,
Changhua Tan:
Effect of SiO2/Si interface roughness on gate current.
Microelectronics Reliability 41(11): 1903-1907 (2001) |
| 2 | EE | Fuchen Mu,
Mingzhen Xu,
Changhua Tan,
Xiaorong Duan:
A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd.
Microelectronics Reliability 41(11): 1909-1913 (2001) |
| 1 | EE | Lingfeng Mao,
Changhua Tan,
Mingzhen Xu:
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures.
Microelectronics Reliability 41(6): 927-931 (2001) |
