| 2007 |
|---|
| 4 | EE | Gemma Gabriel,
Ivan Erill,
Jaume Caro,
Rodrigo Gómez,
Dolors Riera,
Rosa Villa,
Philippe Godignon:
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications.
Microelectronics Journal 38(3): 406-415 (2007) |
| 2004 |
|---|
| 3 | EE | X. Perpiñà,
X. Jordà,
N. Mestres,
M. Vellvehí,
Philippe Godignon,
J. Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.
Microelectronics Journal 35(10): 841-847 (2004) |
| 2 | EE | A. Pérez-Tomás,
X. Jordà,
Philippe Godignon,
J. L. Gálvez,
M. Vellvehí,
J. Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.
Microelectronics Journal 35(8): 659-666 (2004) |
| 2001 |
|---|
| 1 | EE | M. Badila,
Philippe Godignon,
J. Millán,
S. Berberich,
G. Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices.
Microelectronics Reliability 41(7): 1015-1018 (2001) |
