G. Innertsberger
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2001
1
EE
G. Innertsberger,
T. Pompl
,
M. Kerber
: The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices.
Microelectronics Reliability 41
(7): 973-975 (2001)
Coauthor
Index
1
M. Kerber
[
1
]
2
T. Pompl
[
1
]
Copyright ©
Sun May 17 03:24:02 2009 by
Michael Ley
(
ley@uni-trier.de
)
