| 2004 |
|---|
| 4 | EE | Vitezslav Benda,
E. M. Sankara Narayanan:
Advances in power semiconductor devices.
Microelectronics Journal 35(3): 223 (2004) |
| 3 | EE | E. M. Sankara Narayanan,
O. Spulber,
M. Sweet,
J. V. S. C. Bose,
K. Verchinine,
N. Luther-King,
N. Moguilnaia,
M. M. De Souza:
Progress in MOS-controlled bipolar devices and edge termination technologies.
Microelectronics Journal 35(3): 235-248 (2004) |
| 2 | EE | S. Hardikar,
M. M. De Souza,
Y. Z. Xu,
T. J. Pease,
E. M. Sankara Narayanan:
A novel double RESURF LDMOS for HVIC's.
Microelectronics Journal 35(3): 305-310 (2004) |
| 2001 |
|---|
| 1 | EE | M. M. De Souza,
J. Wang,
S. K. Manhas,
E. M. Sankara Narayanan,
A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.
Microelectronics Reliability 41(2): 169-177 (2001) |
